High active carrier concentration in n-type, thin film Ge using delta-doping
نویسندگان
چکیده
منابع مشابه
High active carrier concentration in n-type, thin film Ge using delta-doping
We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10cm, and uniform activated dopant concentrations above 4 × 10cm in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of p...
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2012
ISSN: 2159-3930
DOI: 10.1364/ome.2.001462